Lithium niobate devices fabricated using deep ultraviolet radiation

ABSTRACT

An optical device is described. At least a portion of the optical device includes lithium niobate and is fabricated utilizing ultraviolet lithography. In some aspects the at least the portion of the optical device is fabricated using deep ultraviolet lithography. In some aspects, the short range root mean square surface roughness of a sidewall of the at least the portion of the optical device is less than ten nanometers. In some aspects, the at least the portion of the optical device has a loss of not more than 2 dB/cm.

BACKGROUND OF THE INVENTION

Optical devices, such as waveguides, are utilized in a variety ofapplications. Lithium niobate devices may be desired to be used inwaveguides, resonators, and other optical and electro-optic devices.However, lithium niobate is notoriously difficult to fabricate intodevices having the desired performance characteristics. Accordingly,what is desired is a mechanism for providing optical devices thatutilize lithium niobate and that have sufficient performancecharacteristics.

BRIEF DESCRIPTION OF THE DRAWINGS

Various embodiments of the invention are disclosed in the followingdetailed description and the accompanying drawings.

FIGS. 1A-1B depict embodiments of optical devices including lithiumniobate fabricating using ultraviolet photolithography.

FIG. 2 depicts an embodiment of a measurement indicating transmission inan optical device including lithium niobate and fabricated usingultraviolet photolithography.

FIG. 3 is a flow chart depicting an embodiment of a method for formingan optical device including lithium niobate using ultravioletphotolithography.

FIGS. 4-8 depict an embodiment of an optical device including lithiumniobate formed using ultraviolet photolithography during fabrication.

FIG. 9 is a flow chart depicting an embodiment of a method for formingan optical device including lithium niobate using deep ultravioletphotolithography.

FIGS. 10-15 depict another embodiment of an optical device includinglithium niobate formed using ultraviolet photolithography duringfabrication.

FIGS. 16-21 depict another embodiment of an optical device includinglithium niobate formed using ultraviolet photolithography duringfabrication.

DETAILED DESCRIPTION

The invention can be implemented in numerous ways, including as aprocess; an apparatus; a system; a composition of matter; a computerprogram product embodied on a computer readable storage medium; and/or aprocessor, such as a processor configured to execute instructions storedon and/or provided by a memory coupled to the processor. In thisspecification, these implementations, or any other form that theinvention may take, may be referred to as techniques. In general, theorder of the steps of disclosed processes may be altered within thescope of the invention.

A detailed description of one or more embodiments of the invention isprovided below along with accompanying figures that illustrate theprinciples of the invention. The invention is described in connectionwith such embodiments, but the invention is not limited to anyembodiment. The scope of the invention is limited only by the claims andthe invention encompasses numerous alternatives, modifications andequivalents. Numerous specific details are set forth in the followingdescription in order to provide a thorough understanding of theinvention. These details are provided for the purpose of example and theinvention may be practiced according to the claims without some or allof these specific details. For the purpose of clarity, technicalmaterial that is known in the technical fields related to the inventionhas not been described in detail so that the invention is notunnecessarily obscured.

Lithium niobate (LN) is desired to be used in optical devices,particularly electro-optical devices. As used herein, an optical devicemay include optical devices and electro-optical devices. Thedesirability of LN is due at least in part to variation in therefractive index of LN with an applied external electric field. However,fabrication of LN optical devices having desired performancecharacteristics is challenging. For example, LN optical devices may havehigher losses than desired. Recently, LN optical devices have beenfabricated using an electron beam to pattern mask layers (e.g. viaelectron beam lithography). Underlying hard mask and LN layers may beetched using other techniques. The LN optical devices so formed may haveimproved performance. However, electron beam lithography is timeconsuming, can be nonuniform and may have limited reproducibility.Electron beams pattern masks utilizing a scanning procedure, which isinherently slow. Moreover, electrons beams are subject to drift duringusage. Because beam deflection is limited in range, electron beamphotolithography may only pattern relatively small regions, for exampleon the order of one square millimeter or less. In order to patternlarger regions, the stage for the electron beam is shifted and electronbeam lithography repeated. In addition to slowing throughput, thisaspect of electron beam lithography may induce misalignments at thestitch between these regions. These misalignments adversely affectperformance of the device being fabricated. Thus, an improved method forfabricating LN optical devices is desired.

A method for fabricating an optical device and the optical device soformed are described. At least a portion of the optical device includesLN and is fabricated utilizing photolithography, such as deepultraviolet (DUV) lithography. Fabricating the optical device mayinclude providing a hard mask layer on a LN layer. A mask is fabricatedon the hard mask layer. This mask is formed using DUV photolithography.More specifically, a mask layer is provided, for example by spin coatingon DUV photoresist. The mask layer may be heat treated. Portions of themask layer may be selectively exposed to electromagnetic radiation inthe DUV wavelength range. In some embodiments, the mask layer is heattreated again after the exposure. The mask layer is developed. Thus,portions of the mask layer are removed to form a pattern of aperturesthat expose the underlying hard mask layer. A hard mask is formed fromthe hard mask layer by transferring the pattern of the mask to the hardmask layer. For example, portions of the hard mask layer uncovered byapertures in the mask may be selectively etched. The hard mask may havedepressions or apertures in regions in which the hard mask layer wasetched. The pattern of the hard mask may be transferred to the LN layer,for example using a physical etch. At least the exposing may beperformed multiple times for multiple stitched regions across thesurface of a substrate. In some cases, each of these stitched regions isat least ten millimeters by ten millimeters. In some embodiments, astitched region may be at least fifteen millimeters by fifteenmillimeters. In some embodiments, each stitched region is at leasttwenty millimeters by twenty millimeters. Thus, longer and/or moreoptical devices including LN may be fabricated using DUV lithographywithin a single stitched region.

The LN in the optical device fabricated using DUV lithography hasimproved surface roughness for the sidewall(s). For example, the shortrange root mean square surface roughness of a sidewall of the LN in theoptical device formed using DUV photolithography is less than tennanometers. In some embodiments, this root mean square surface roughnessis not more than five nanometers. In some cases, the short range rootmean square surface roughness does not exceed two nanometers. The LN inthe optical device may also have improved performance. In some aspects,the LN in the optical device has a loss of not more than 2 dB/cm. Insome embodiments, the LN has a loss of less than 1.0 dB/cm. In somecases, this loss is not more than 0.5 dB/cm. Thus, performance ofoptical devices including LN may be improved.

FIGS. 1A and 1B depict embodiments of devices 100A and 100B,respectively, including LN fabrication using photolithography, such asDUV lithography. FIG. 1A is a diagram depicting device 100A includingoptical device 110A formed on substrate 101A. FIG. 1A is not to scale.Substrate 101A may include a carrier wafer as well as any underlayersbetween the wafer and optical device 110A. Optical device 110A includesan LN region. Although shown as only part of optical device 110A, theentire layer may be formed of LN. In some embodiments, optical device110A may include other components that are not shown. Optical device110A includes flat regions 111A, sidewalls 112A and 114A as well as topsurface 116A. Thus, optical device 110 includes a ridge having sidewalls112A and 114A and top surface 116A. Thus, in the embodiment shown, theLN layer is not completely etched through. In another embodiment and/orin other regions, the LN layer may be etched through to expose theunderlying layers such as substrate 101A. In such an embodiment, some orall of flat regions 111A may be omitted.

Similarly, FIG. 1B is micrograph of device 100B including optical device110B formed on a substrate (not shown). The substrate may include acarrier wafer as well as any underlayers between the wafer and opticaldevice 110B. Optical device 110B consists of an LN layer. In someembodiments, optical device 110B may include other components that arenot shown. Optical device 110B includes a ridge having sidewalls 112Band 114A as well as top surface 116B and flat regions 111B.

LN region of optical device 110A and optical device 110B are formedusing DUV lithography. As a result, sidewalls 112A, 114A, 112B and 114Bof optical devices 110A and 110B have improved surface roughness. Theshort range root mean square (RMS) surface roughness is the RMS surfaceroughness for lengths (e.g. along direction 1) of not more than twohundred nanometers. The short range RMS surface roughness of sidewalls112A and 114A of LN region in optical device 110A and the short rangeRMS surface roughness of LN optical device 110B are each less than tennanometers. In some embodiments, the short range RMS surface roughnessfor both the LN region of optical device 110A and LN optical device 110Bis not more than five nanometers. The short range RMS surfaceroughnesses of the LN region of optical device 110A and LN opticaldevice 110B do not exceed two nanometers in some embodiments. Further,the short range RMS roughness of each of top surfaces 116A and 116B isnot more than one nanometer in some embodiments. In some embodiments,the long range (lengths greater than two hundred nanometers through twohundred micrometers) RMS surface roughness of sidewalls 112A, 114A, 112Band/or 114B may differ from the short range RMS surface roughness.

Because of the improved smoothness, the optical device may have improvedperformance. This may be seen in reference to FIG. 2, which depicts anembodiment 200 of a measurement indicating transmission in an opticaldevice including lithium niobate and fabricated using ultravioletphotolithography. Graph 200 indicates transmission through an LN opticaldevice, such as optical device(s) 110A and/or 110B, that operates as aresonator. The dip in graph 200 indicates resonance. In someembodiments, the width of the peak is on the order of picometers andindicates the efficiency of the corresponding optical device. In someembodiments, LN region of optical device 110A and LN optical device 110Bhas a loss in signal of not more than 5 dB/cm. In some embodiments, LNregion of optical device 110A and LN optical device 110B each has a lossof not more than 2 dB/cm. In some such embodiments, the loss for each ofLN region of optical device 110A and LN optical device 110B is less than1.0 dB/cm. For example, this loss may be not more than 0.5 dB/cm in someembodiments.

Thus, optical devices 110A and 110B fabricated using DUV lithography mayhave reduced surface roughness and improved efficiency. Further, becausepatterning is performed using DUV lithography, optical devices 110A and110B may be fabricated with higher reproducibility, better uniformity,higher throughput, and over a larger region of substrate 101A and 101B.Thus, the method for fabricating optical devices including LN and theoptical devices so formed may be improved.

FIG. 3 is a flow chart depicting an embodiment of method 300 for formingan optical device including LN using ultraviolet lithography, such asDUV lithography. Method 300 is described in the context of processesthat may have sub-processes. Although described in a particular order,another order not inconsistent with the description herein may beutilized. Method 300 starts after a LN layer has been provided on asubstrate. In some embodiments, the LN layer may be thin, for example,not more than ten micrometers in thickness. In some embodiments, the LNlayer may be not more than one micrometer in thickness. In someembodiments, the thickness of the LN layer may be not more than sevenhundred nanometers. In some such embodiments, the thickness may be notmore than four hundred nanometers. Other thicknesses are possible.Underlayers, such as silicon dioxide, may exist between the LN layer anda carrier wafer. In some embodiments, the carrier wafer may includesilicon, quartz, silica, LN, sapphire and/or another material. Forexample, the LN layer may reside on a silicon dioxide underlayer havinga thickness of nominally at least two and not more than fivemicrometers. Other thicknesses, additional layers and/or other layersmay be present.

A hard mask layer is provided, at 302. In some embodiments, the hardmask may include one or more of amorphous silicon, silicon dioxide,silicon nitride, ceramic, metal (e.g. Ti) or other hard mask material.In some embodiments, chemical vapor deposition (CVD) or other depositionmethod may be utilized at 302.

A mask is formed on the hard mask layer using UV lithography, at 304. Insome embodiments, 304 includes providing a mask layer. For example, themask layer may be a photoresist layer spin coated onto the hard masklayer. Using UV lithography, portions of the mask layer are selectivelyexposed. In some embodiments, the wavelengths of electromagneticradiation used for UV photolithography are not more than four hundredfifty nanometers. In some embodiments, DUV lithography is utilized. Forexample, the wavelength of electromagnetic radiation used may be lessthan two hundred and fifty nanometers. In some embodiments, otherwavelengths of electromagnetic radiation may be used to expose the masklayer. Also as part of 304, the mask layer may heat treated (e.g. baked)before and/or after exposure. The exposed mask is also developed. Insome embodiments, no post-development bake is performed. Thus, portionsof the mask layer are removed to form aperture(s) in the mask layer.Consequently, a mask having a pattern is formed.

The hard mask is provided from the hard mask layer, at 306. To do so,the mask formed by DUV lithography is utilized. Thus, a pattern from themask may be transferred to the hard mask layer. The hard mask is thusformed. In some embodiments, 306 includes chemically and/or physicallyremoving portions of the hard mask layer uncovered by the pattern in themask. In some embodiments, the removal at 306 forms apertures in thehard mask layer to provide the hard mask. In some embodiments, theremoval at 306 forms depressions in the hard mask layer to provide thehard mask. A hard mask may be used in method 300 because the maskpatterned using DUV lithography may be more subject to removal by theetch used in patterning the LN layer at 308, described below. Suchremoval of the mask may result in sidewalls of the optical device thathave a higher surface roughness than desired. However, in otherembodiments, steps 302 and 304 might be omitted, for example if a highersurface roughness might be tolerated.

The LN layer is etched using the hard mask, at 308. Thus, the pattern inthe hard mask may be transferred to the LN layer at 308. In someembodiments, a physical etch is used at 308. For example, a dry etch, areactive ion etch (ME), a plasma etch and/or other physical etchingmechanism may be utilized at 308. In some embodiments, a chemical etchor other etch may be used at 308. In embodiments in which the hard maskincludes depressions instead of apertures, the pattern transfer at 308also removes at least some of the thinned portions of the hard mask. Insome embodiments, the LN layer is not completely etched through at 308.Thus, the optical devices formed may be raised portions, or ridges,remaining after 308. In some embodiments, portions of the LN layer maybe etched through at 308. Also at 308, any remaining mask and/or hardmask may be removed.

Some or all of method 300 is optionally repeated, at 310. For example,at 304 a mask layer may be provided and baked. After one region isexposed, a stage may be shifted to expose additional region(s) of themask layer. Thus, this portion of 304 may be repeated. Once all desiredregions have been exposed, the mask layer may undergo development toprovide the mask for the entire substrate. The pattern may then betransferred to underlying layers at 306 and 308. Thus, at least part of304 is repeated one or more times in some embodiments. In otherembodiments, 302, 304, 306 and 308 may be repeated for different regionsof the substrate. Thus, multiple regions of a device may be fabricated.For example, larger optical devices and/or optical devices that extendacross edges of the regions patterned may be formed.

For example, FIGS. 4-8 depict an embodiment of device 400 including LNand formed using method 300 during fabrication. FIGS. 4-8 are not toscale and only a portion of the device 400 is shown. Further, device 400is for explanatory purposes and may not represent a particular device.For example, sidewalls are generally shown as vertical and flat, whiletop surface are generally shown as horizontal and flat. However, somevariations are generally present.

FIG. 4 depicts device 400 after the mask layer has been provided as partof 304. Thus, substrate 401 which may include a carrier wafer,underlayer 402, LN layer 410, hard mask layer 420 and DUV mask layer 430are shown. Underlayer 402 may be an insulator such as silicon dioxide.In this embodiment, underlayer 402 is depicted separately from substrate401. In some embodiments, other layers may be present and/or somelayer(s) shown may be omitted. For example, underlayer 402 may beomitted in some embodiments.

FIG. 5 depicts device 400 after 304 has been completed. DUV mask layer430 has been selectively exposed to DUV light and developed. Thus, DUVmask 430A has been formed. Portions of hard mask layer 420 are uncoveredby DUV mask 430A.

FIG. 6 depicts device 400 after 306 has been completed. Thus, hard mask420A has been formed. In the embodiment shown, the pattern of DUV mask430A has been transferred to hard mask 420A. In the embodiment shown,hard mask 420A has depressions 422 in the regions where hard mask layer430 was etched. Thus, the pattern of DUV mask 430A has been transferredto hard mask 420A.

FIGS. 7-8 depicts device 400 after 308 has been completed. DUV mask 430Aand hard mask 420A have also been removed. FIG. 7 is a cross sectionalview of device 400. FIG. 8 is a plan view of device 400 indicating astitch (shown by dashed line). Thus, LN optical device 410A is shown inFIGS. 7 and 8. Also shown in FIG. 8 is LN optical device 410B. In someembodiments, LN optical device 410A and/or LN optical device 410Binclude other components. For simplicity, however, only a portion of LNoptical device 410A and a portion of LN optical device 410B are shown.LN optical devices 410A and 410B may be considered ridges formed in LNlayer 410 by removing portions of LN layer uncovered by hard mask 420A.Thus, sidewalls of optical devices 410A and 410B, such as sidewalls 412and 414, are sidewalls for the ridges. In some embodiments, LN layer 410may be etched through at 308. In such embodiments, the underlyinglayers, such as underlayer(s) 402, may be exposed after 308 iscompleted.

LN optical devices 410A and 410B are in different stitched regions thatare exposed at different times. Thus, as indicated in FIG. 8, LN opticaldevices 410A and 410B may be misaligned. Consequently, LN opticaldevices 410A and 410B are slightly widened in the region of the stitchin order to reduce the impact of such misalignments. Thus, in theembodiment shown, LN optical devices 410A and 410B may be consideredpart of a single optical device that spans multiple stitched regions. LNoptical devices 410A and 410B are also formed using DUV lithography.Thus, each has sidewalls. Sidewalls 412 and 414 of LN optical device410A are labeled in FIGS. 7 and 8. Sidewalls 412 and 414 have improvedsurface roughness because of the use of DUV lithography. The short rangeRMS surface roughnesses of sidewalls 412 and 414 of LN optical device410A are each less than ten nanometers. In some embodiments, the shortrange RMS surface roughness for each sidewall 412 and 414 of LN opticaldevice 410A is not more than five nanometers. The short range RMSsurface roughness of each sidewall 412 and 414 of LN optical device 410Adoes not exceed two nanometers in some embodiments. LN optical device410B has analogous short range RMS surface roughness(es) as LN opticaldevice 410A.

Optical devices 410A and 410B may have improved performance. In someembodiments, each LN optical device 410A and 410B has a loss in signalof not more than 5 dB/cm. In some embodiments, LN optical devices 410Aand 410B each has a loss of not more than 2 dB/cm. In some suchembodiments, the loss for each of LN optical devices 410A and 410B isless than 1.0 dB/cm. For example, this loss may be not more than 0.5dB/cm in some embodiments.

Thus, LN optical devices 410A and 410B may have improvedmanufacturability, performance and reduced sidewall surface roughness.Because DUV lithography is utilized, throughput may be increased and thetime taken to fabricate device 400 reduced, uniformity may be improvedand reproducibility enhanced. DUV lithography also has large stitchedregions. For example, in some embodiments, a stitched region that is atleast ten millimeters by ten millimeters may undergo DUV lithography ina single shot. In some embodiments, a stitched region may be at leastfifteen millimeters by fifteen millimeters. For example, a stitchedregion may be nominally twenty millimeters by twenty millimeters orlarger. Thus, the number of stitches, such as shown in FIG. 8, isreduced. This may not only increase throughput and reproducibility, butalso reduce misalignments (e.g. as shown between LN optical device 410Aand 410B) in an optical device.

FIG. 9 is a flow chart depicting an embodiment of method 900 for formingan optical device including LN using DUV lithography. Method 900 isdescribed in the context of processes that may have sub-processes.Although described in a particular order, another order not inconsistentwith the description herein may be utilized. Method 900 starts after aLN layer has been provided on a substrate, such as a carrier wafer. Insome embodiments, the LN layer may be thin, for example, not more thanten micrometers in thickness. In some embodiments, the LN layer may benot more than one micrometer thick. In some embodiments, the thicknessof the LN layer may be not more than seven hundred nanometers. In somesuch embodiments, the thickness may be not more than four hundrednanometers. Other thicknesses are possible. Insulating underlayer(s),such as silicon dioxide, may exist between the LN layer and theunderlying wafer. For example, the LN layer may reside on a silicondioxide underlayer having a thickness of nominally at least two and notmore than approximately five micrometers. Other thicknesses, additionallayers and/or other layers may be present.

A stop layer may be provided, at 902. The stop layer is insensitive toan etch which may be used in forming the hard mask. For example, if achemical etch is utilized in selectively removing portions of the hardmask layer, as discussed below, then the stop layer provided at 902 isinsensitive to the chemistry used in such an etch. If multiple etchesare utilized in forming the hard mask, then the stop layer provided at902 is desired to be insensitive to at least the final etch(es) used inpatterning the hard mask. The etch stop layer provided at 902 may alsobe removed without undue damage to the underlying LN layer. In someembodiments, 902 may be omitted.

A hard mask layer is provided, at 904. In some embodiments, the hardmask may include one or more of amorphous silicon, silicon dioxide,silicon nitride, aluminum oxide, titanium dioxide, a ceramic, anothersemiconductor and/or other hard mask material. In some embodiments, ametal hard mask may be used. In some embodiments, CVD, plasma enhancedCVD or other deposition method may be utilized at 904.

An antireflective coating (ARC) layer is provided on the hard masklayer, at 906. In some embodiments, the ARC layer is spin coated on thehard mask layer. The ARC layer is configured to reduce reflections ofDUV electromagnetic radiation from the underlying layers during DUVlithography for the DUV mask. In some embodiments, 906 may be omitted.

A DUV mask layer is provided on the ARC layer, at 908. In someembodiments, the DUV mask layer is a polymer, such as DUV photoresist.For example, a DUV photoresist such as UVTM 210 Positive DUV Photoresistmay be used. In some embodiments, 908 includes spin coating the DUV masklayer. However, other deposition methods are possible.

The DUV mask layer is heat treated prior to exposure, at 910. Thus, 910may be considered a pre-exposure baking or pre-exposure heat treatment.In some embodiments, the heat treatment at 910 is performed attemperature(s) greater than one hundred and forty degrees Celsius. Insome embodiments, the heat treatment is at temperature(s) greater thanone hundred and forty-five degrees Celsius. For example, temperatures ator near one hundred and fifty degrees Celsius may be used for the heattreatment at 910. In some embodiments, the heat treatment is for greaterthan one minute. In some embodiments, at least seventy seconds is usedfor the heat treatment. In some embodiments, the heat treatment at 910is for at least eighty seconds. For example, the device may be heattreated at temperature(s) at or around one hundred and fifty degreesCelsius for a time of nominally ninety seconds or more.

In some embodiments, 910 includes gradually increasing the temperaturethe device is exposed to for the pre-exposure heat treatment. In someembodiments, the temperature (e.g. of the mask layer, other portion ofthe device, or as measured in an oven or on a hot plate) is increased ata rate of not more than 140 degrees Celsius per minute. In someembodiments, the rate of increase of the temperature is not more thanone hundred and twenty-five degrees Celsius per minute. In someembodiments, the temperature is increased at a rate of not more than onehundred degrees Celsius per minute.

The DUV mask layer is selectively exposed to DUV radiation, at 912. Forexample, wavelengths of not more than two hundred and fifty nanometersmay be used at 912. In some embodiments, 912 includes exposing multiplestitched regions. For example, a stitched region may be exposed, thestage moved and another region exposed with the same or a differentreticle. Thus, the DUV mask layer is selectively exposed to DUVradiation.

The DUV mask layer is heat treated after the exposure, at 914. Thus, 914may be considered a post-exposure baking or post-exposure heattreatment. In some embodiments, the heat treatment at 914 is performedat temperature(s) greater than one hundred and forty degrees Celsius. Insome embodiments, the heat treatment is at temperature(s) greater thanone hundred and forty-five degrees Celsius. For example, temperatures ator near one hundred and fifty degrees Celsius may be used for the heattreatment at 914. In some embodiments, the heat treatment is for greaterthan one minute. In some embodiments, at least seventy seconds is usedfor the heat treatment. In some embodiments, the heat treatment at 914is for at least eighty seconds. For example, the device may be heattreated at temperature(s) at or around one hundred and fifty degreesCelsius for a time of nominally ninety seconds or more.

In some embodiments, 914 includes gradually increasing the temperatureto which the device is exposed for the post-exposure heat treatment. Insome embodiments, the temperature (e.g. of the mask layer, other portionof the device, or as measured in an oven or on a hot plate) is increasedat a rate of not more than 140 degrees Celsius per minute. In someembodiments, the rate of increase of the temperature is not more thanone hundred and twenty-five degrees Celsius per minute. In someembodiments, the temperature is increased at a rate of not more than onehundred degrees Celsius per minute.

The exposed DUV mask layer is also developed, at 916. In someembodiments, no post-development bake is performed. Thus, portions ofthe DUV mask layer are removed to form aperture(s) in the DUV masklayer. Consequently, a DUV mask having a pattern is formed.

The portions of the ARC layer that are uncovered by apertures in the DUVmask are removed, at 918. For example, the ARC layer may be etched at918. In some embodiments, 918 may be omitted. In such embodiments, theARC layer may be removed in the same process utilized at 920.

The pattern of the DUV mask is transferred to the hard mask layer, at920. In some embodiments, the pattern in the DUV mask is alsotransferred to the ARC layer. The hard mask is thus formed. In someembodiments, 920 includes chemically and/or physically removing portionsof the hard mask layer uncovered by the pattern in the mask. Forexample, if the hard mask layer is a silicon dioxide layer then afluorine-based chemistry may be used at 920. In other embodiments, a dryetch, an RIE or other etching mechanism may be used. In someembodiments, the removal at 920 forms apertures in the hard mask layerto provide the hard mask. In such embodiments, the stop layer formed at902 may prevent damage to the underlying LN layer. In some embodiments,the removal at 920 forms depressions in the hard mask layer to providethe hard mask. Thus, damage to the LN layer may still be avoided.

The pattern of the hard mask may be transferred to the stop layer, at922. This may occur via a chemical or physical etch. The etch used toremove the stop layer at 922 is different from one or more of theetch(es) used to pattern the hard mask at 920. In some embodiments, 922may be omitted.

The pattern in the hard mask is transferred to the LN layer, at 924. Insome embodiments, a physical etch is used at 924. For example, a dryetch, a reactive ion etch (RIE), a plasma etch and/or other physicaletching mechanism may be utilized. In some embodiments, a chemical etchor other removal mechanism may be used at 924. In some embodiments, theLN layer is not etched through at 924. Thus, LN optical devices may beformed of or include ridges remaining after partial removal of portionsof the LN layer. In some embodiments, the LN layer may be completelyetched through in some regions. In embodiments in which the hard maskincludes depressions instead of apertures, the pattern transfer at 924also removes at least some of the thinned portions of the hard mask. Insome embodiments, the pattern transfer at 924 may also remove some orall of the etch stop layer uncovered by the hard mask. The etch used toform the hard mask at 920 may be decoupled from the etch used to removeportions of the LN layer at 924. Consequently, these etches may beseparately optimized. This may result in smoother sidewalls for theoptical device(s) being fabricated.

Any remaining DUV mask, ARC layer, and/or hard mask may be removed, at926. Fabrication of the device may be completed. For example, the LNoptical device(s) formed may be singulated and/or additional componentsfabricated.

For example, FIGS. 10-15 depict an embodiment of device 1000 includingLN and formed using method 900 during fabrication. FIGS. 10-15 are notto scale and only a portion of the device 1000 is shown. Further, device1000 is for explanatory purposes and may not represent a particulardevice. For example, sidewalls are shown as vertical and flat, while topsurface are shown as horizontal and flat. However, some variations aregenerally present.

FIG. 10 depicts device 1000 after 904, 906 and 908 have been completed.Thus, substrate 1001 which may include a carrier wafer, underlayer 1002,LN layer 1010, hard mask layer 1030, ARC layer 1040 and DUV mask layer1050 are shown. Underlayer 1002 may be an insulator such as silicondioxide. In this embodiment, underlayer 1002 is depicted separately fromsubstrate 1001. In some embodiments, other layers may be present and/orsome layer(s) shown may be omitted. For example, underlayer(s) 1002 maybe omitted in some embodiments. In the embodiment shown, an etch stoplayer is not utilized. Thus, 902 and 922 are omitted.

FIG. 11 depicts device 1000 after 910, 912, 914 and 916 have beencompleted. DUV mask layer 1050 has undergone a pre-exposure bake, beenselectively exposed to DUV radiation, undergone a post-exposure bake anddeveloped. Thus, DUV mask 1050A has been formed. Portions of ARC layer1040 are uncovered by DUV mask 1050A.

FIG. 12 depicts device 1000 after 918 has been completed or the portionsof ARC layer 1040 left uncovered by DUV mask 1050A have been otherwiseremoved (e.g. as part of 920). Thus, portions of hard mask layer 1030are uncovered.

FIG. 13 depicts device 1000 after 920 has been completed. Thus, thepattern of DUV mask 1050A has been transferred to hard mask 1030A. Inthe embodiment shown, hard mask 1030A has depressions 1030B in theregions where hard mask layer 1030 was etched. Thus, the pattern of DUVmask 1050A has been transferred to hard mask 1030A.

FIG. 14 depicts device 1000 after 924 has been completed. Thus, LNoptical devices 1010A and 1010B have been formed. LN device 1010A hassidewalls 1012A and 1014A. LN optical device 1010B has sidewalls 1012Band 1014B.

FIG. 15 depicts device 1000 after 926 has been completed and the layersabove LN optical devices 1010A and 1010B have been removed. Device 1000may undergo further processing to complete optical and/or other devicesutilizing LN optical devices 1010A and/or 1010B.

LN optical devices 1010A and 1010B are formed using DUV lithography ofmethod 900. Thus, sidewalls 1012A, 1014A, 1012B and 1014B of LN opticaldevices 1010A and 1010B have improved surface roughness. The short rangeRMS surface roughnesses of sidewalls 1012A, 1014A, 1012B and 1014B areeach less than ten nanometers. In some embodiments, the short range RMSsurface roughness for each sidewall 1012A, 1014A, 1012B and 1014B is notmore than five nanometers. The short range RMS surface roughness of eachsidewall 1012A, 1014A, 1012B and 1014B does not exceed two nanometers insome embodiments.

Optical devices 1010A and 1010B may have improved performance. In someembodiments, each LN optical device 1010A and 1010B has a loss in signalof not more than 5 dB/cm. In some embodiments, LN optical device 1010Aand 1010B each has a loss of not more than 2 dB/cm. In some suchembodiments, the loss for each of LN optical devices 1010A and 1010B isless than 1.0 dB/cm. For example, this loss may be not more than 0.5dB/cm in some embodiments.

FIGS. 16-21 depict an embodiment of device 1600 including LN and formedusing method 900 during fabrication. FIGS. 16-21 are not to scale andonly a portion of the device 1600 is shown. Further, device 1600 is forexplanatory purposes and may not represent a particular device. Forexample, sidewalls are shown as vertical and flat, while top surface areshown as horizontal and flat. However, some variations are generallypresent.

FIG. 16 depicts device 1600 after 902, 904, 906 and 908 have beencompleted. Thus, substrate 1601 which may include a carrier wafer,underlayer 1602, LN layer 1610, etch stop layer 1620, hard mask layer1630, ARC layer 1640 and DUV mask layer 1650 are shown. Underlayer 1602may be an insulator such as silicon dioxide. In this embodiment,underlayer 1602 is depicted separately from substrate 1601. Etch stoplayer 1620 may include amorphous silicon and/or other materialinsensitive to one or more of the etch(es) used for hard mask layer1630. Etch stop layer 1620 may be at least ten nanometers thick and notmore than fifty nanometers thick in some embodiments. In someembodiments, etch stop layer 1620 may also be removed without unduedamage to the underlying LN layer 1610. In some embodiments, otherlayers may be present and/or some layer(s) shown may be omitted. Forexample, underlayer(s) 1602 may be omitted in some embodiments.

FIG. 17 depicts device 1600 after 910, 912, 914, 916 and 918 have beencompleted. DUV mask layer 1650 has undergone a pre-exposure bake, beenselectively exposed to DUV radiation, undergone a post-exposure bake anddeveloped. Thus, DUV mask 1650A has been formed. Portions of ARC layer1640 uncovered by DUV mask 1650A have been removed. Thus, ARC layerportions 1640A remain. Portions of hard mask layer 1630 are uncovered.

FIG. 18 depicts device 1600 after 920 has been completed. Thus, thepattern of DUV mask 1650A has been transferred to hard mask 1630A. Inthe embodiment shown, hard mask 1630A has apertures 1630B in the regionswhere hard mask layer 1630 was etched. Thus, portions of etch stop layer1620 are uncovered. Thus, the pattern of DUV mask 1650A has beentransferred to hard mask 1630A.

FIG. 19 depicts device 1600 after 922 has been completed or etch stoplayer 1620 has been selectively etched as part of transfer of thepattern to LN layer 1610. Thus, the uncovered regions of etch stop layer1620 have been removed. Portions 1620A of the etch stop layer remain. Insome embodiments, etch stop layer 1620 need not be completely removed at922. In such embodiments, LN layer 1610 may be covered by a portion ofthe etch stop layer. Such portions are then removed by the patterntransfer at 924.

FIG. 20 depicts device 1600 after 924 has been completed. Thus, LNoptical devices 1610A and 1610B have been formed. LN device 1610A hassidewalls 1612A and 1614A. LN optical device 1610B has sidewalls 1612Band 1014B.

FIG. 21 depicts device 1600 after 926 has been completed and the layersabove LN optical devices 1610A and 1610B have been removed. Device 1600may undergo further processing to complete optical and/or other devicesutilizing LN optical devices 1610A and/or 1610B.

LN optical devices 1610A and 1610B are formed using DUV lithography ofmethod 900. Thus, sidewalls 1612A, 1614A, 1612B and 1614B of LN opticaldevices 1610A and 1610B have improved surface roughness. The short rangeRMS surface roughnesses of sidewalls 1612A, 1614A, 1612B and 1614B areeach less than ten nanometers. In some embodiments, the short range RMSsurface roughness for each sidewall 1612A, 1614A, 1612B and 1614B is notmore than five nanometers. The short range RMS surface roughness of eachsidewall 1612A, 1614A, 1612B and 1614B does not exceed two nanometers insome embodiments.

Optical devices 1610A and 1610B may have improved performance. In someembodiments, each LN optical device 1610A and 1610B has a loss in signalof not more than 5 dB/cm. In some embodiments, LN optical device 1610Aand 1610B each has a loss of not more than 2 dB/cm. In some suchembodiments, the loss for each of LN optical devices 1610A and 1610B isless than 1.0 dB/cm. For example, this loss may be not more than 0.5dB/cm in some embodiments.

Thus, method 900 provides LN optical devices 1010A, 1010B, 1610A and/or1610B that may have improved manufacturability, performance and reducedsidewall surface roughness. Because DUV lithography is utilized,throughput may be increased and the time taken to fabricate devices 1000and 1600 reduced, uniformity may be improved and reproducibilityenhanced. Moreover, use of DUV lithography may be more readily scaled tofabrication of large numbers of devices in manufacturing. DUVlithography also has larger stitched regions. For example, in someembodiments, a stitched region that is at least ten millimeters by tenmillimeters may undergo DUV lithography in a single shot. In someembodiments, a stitched region may be at least fifteen millimeters byfifteen millimeters. For example, a stitched region may be nominallytwenty millimeters by twenty millimeters or larger. Thus, the number ofstitches (not shown) is reduced. This may not only increase throughputand reproducibility, but also reduce misalignments in an optical device.Thus, fabrication and performance of optical devices including LN may beenhanced.

Although the foregoing embodiments have been described in some detailfor purposes of clarity of understanding, the invention is not limitedto the details provided. There are many alternative ways of implementingthe invention. The disclosed embodiments are illustrative and notrestrictive.

What is claimed is:
 1. A device, comprising: an optical device, at leasta portion of the optical device including lithium niobate, the at leastthe portion of the optical device being fabricated utilizing ultraviolet(UV) photolithography and including a sidewall of the lithium niobate,the sidewall having a short range root mean square roughness of lessthan ten nanometers; wherein the sidewall is fabricated using the UVphotolithography, a first etch and a second etch, the UVphotolithography being used to form a mask for fabricating a hard maskfrom a hard mask layer, the first etch for removing a portion of thehard mask layer to form the hard mask, the second etch for removing aportion of the lithium niobate to form the sidewall, the second etchbeing selected from a dry etch, a reactive ion etch (RIE), a plasma etchand a chemical etch, the second etch being different from the first etchsuch that the sidewall has the short range root mean square roughness ofless than ten nanometers.
 2. (canceled)
 3. (canceled)
 4. The device ofclaim 1, wherein the short range root mean square surface roughness isnot more than five nanometers.
 5. The device of claim 4, wherein theshort range root mean square surface roughness is not more than twonanometers.
 6. The device of claim 1, wherein the at least the portionof the optical device has a loss of not more than 2 dB/cm.
 7. The deviceof claim 6, wherein the loss is less than 1.0 dB/cm.
 8. The device ofclaim 7, wherein the loss is less than 0.5 dB/cm.
 9. The device of claim8, wherein the loss is not more than 0.1 dB/cm.
 10. The device of claim1, wherein the at least the portion of the optical device consists oflithium niobate.
 11. A method of providing an optical device,comprising: providing a hard mask layer on a lithium niobate layer;providing a mask on the hard mask layer, the mask having a patternformed using ultraviolet (UV) lithography; forming a hard mask from thehard mask layer by transferring the pattern to the hard mask layer, theforming including performing a first etch for removing a portion of thehard mask layer to form the hard mask; and transferring the pattern fromthe hard mask to the lithium niobate layer to form at least a portion ofthe optical device including a sidewall of the lithium niobate layer,the sidewall having a short range root mean square roughness of lessthan ten nanometers, the transferring the pattern including performing asecond etch for removing a portion of the lithium niobate layer to formthe sidewall, the second etch being selected from a dry etch, a reactiveion etch (RIE), a plasma etch and a chemical etch, the second etch beingdifferent from the first etch such that the sidewall has the short rangeroot mean square roughness of less than ten nanometers.
 12. The methodof claim 11, wherein the providing the mask further includes: providinga mask layer; heat treating the mask layer at a bake temperature ofgreater than 140 degrees Celsius; exposing portions of the mask layerusing electromagnetic radiation in the UV wavelength range after theheat treating; and developing the mask layer after the exposing to format least one aperture in the mask layer corresponding to the pattern andform the mask.
 13. The method of claim 12, wherein the heat treatingfurther includes: increasing a temperature for the mask layer at a rateof not more than 140 degrees Celsius per minute.
 14. The method of claim12, wherein the providing the mask further includes: performing anadditional heat treating after the exposing and before the developing,the additional heat treating being at an additional temperature ofgreater than one hundred forty degrees Celsius.
 15. The method of claim11 wherein the UV providing the mask further includes utilizing deep UV(DUV) lithography.
 16. The method of claim 11, wherein the forming thehard mask further includes: forming at least one depression in the hardmask layer to form the pattern, the depression residing over at leastone region of the lithium niobate layer to be removed and correspondingto the pattern.
 17. The method of claim 11, further comprising:providing a stop layer on the lithium niobate layer such that the hardmask layer resides on the stop layer, the stop layer being insensitiveto an etch of the hard mask; and wherein the forming the hard maskfurther includes forming at least one aperture in the hard mask, the atleast one aperture corresponding to the pattern and exposing a portionof the etch stop layer residing on a region of the lithium niobate layerto be removed.
 18. The method of claim 11, wherein the pattern includesa plurality of stitched region, each of the stitched regions having anarea of at least ten millimeters by ten millimeters.
 19. The method ofclaim 11, wherein the hard mask layer includes at least one of siliconoxide, amorphous silicon and silicon nitride.
 20. A method for providingan optical device, comprising: providing a hard mask layer on a lithiumniobate layer; providing a mask on the hard mask layer, the mask havinga pattern formed using deep ultraviolet (DUV) lithography, the providingthe mask further including providing a mask layer; heat treating themask layer at a first temperature of greater than 140 degrees Celsius,the heat treating including increasing a temperature for the mask layerat a rate of not more than 140 degrees Celsius per minute; exposingportions of the mask layer using electromagnetic radiation in the DUVwavelength range; performing an additional heat treating after theexposing at a second temperature of greater than one hundred fortydegrees Celsius, the additional heat treating including increasing anadditional temperature for the mask layer at an additional rate of notmore than 140 degrees Celsius per minute; developing the mask layerafter the additional heat treating to form at least one aperture in themask layer corresponding to the pattern and form the mask; forming ahard mask from the hard mask layer by transferring the pattern to thehard mask layer, the forming including performing a first etch forremoving a portion of the hard mask layer to form the hard mask; andetching the lithium niobate layer to transfer the pattern from the hardmask to the lithium niobate layer to form at least a portion of theoptical device including a sidewall of the lithium niobate layer, thesidewall having a short range root mean square roughness of less thanten nanometers, the transferring the pattern including performing asecond etch for removing a portion of the lithium niobate layer to formthe sidewall, the second etch being selected from a dry etch, a reactiveion etch (RIE), a plasma etch and a chemical etch, the second etch beingdifferent from the first etch such that the sidewall has the short rangeroot mean square roughness of less than ten nanometers.
 21. The deviceof claim 1, wherein the sidewall is included in at least one stitchedregion, each of the at least one stitched region having an area of atleast ten millimeters by ten millimeters.
 22. The device of claim 1,wherein at least one of the hard mask includes depressions thereincorresponding to the pattern and fabrication of the sidewall includesproviding a stop layer under the hard mask layer and removing a portionof the stop layer after the forming the hard mask, such that thesidewall has the short range root mean square roughness of less than tennanometers.
 23. The device of claim 1, wherein the sidewall has a heightof at least four hundred nanometers.